Editing Plasma Physics Laboratory (section)

==Plasma Enhanced Chemical Vapor Deposition (PECVD)==

The chemical vapor deposition (CVD) technique is the most popular tool in the deposition of metastable film phase of carbon. A wide variation of this process is now in use. Plasma-enhanced chemical vapor deposition (PECVD) and hot-filament chemical vapor deposition (HFCVD) are among the widely used techniques. The interest in these techniques is due to the potential usefulness in producing diamond films suitable for semiconductor, coatings and other applications. In our previous studies, we have developed a facility which demonstrated both techniques for the synthesis of diamond and diamond-like-carbon (DLC) films. In this project, the locally fabricated facility will be upgraded for the preparation of deposition of diamond and DLC thin films intended for industrial applications. The conditions for deposition using the industrial prototype will be determined. For example, the effects of gas mixture, substrate bias and temperature on the type of film produced will be investigated. Standard surface characterization techniques such as scanning electron microscopy (SEM) , Raman spectroscopy and Fourier transform infrared spectroscopy will be used to confirm the deposits.

The PECVD facility, which is upgraded for better cooling and deposition, is made up mainly of stainless steel. Aluminum electrodes serve as the cathode and anode. Molybdenum cup serves as substrate holder and is placed between the electrodes. Plasma diagnostic is done during deposition with the Langmuir probe. The viewport that is attached in the chamber is also used for spectroscopy and to view the deposition process inside. Thermocouple and ionization gauge are used to observe the substrate temperature and vacuum pressure respectively. The PECVD evolve in a dc discharge plasma process.

Group Leader:
*Karel Pabelina, PhD Physics student